- Artikelnummer
- TP65H070LDG-TR
- Tillverkare
- Transphorm
- kategorier
- RF JFET Transistors
- RoHS
- Datablad
- Beskrivning
- RF JFET Transistors 227-TP65H070LSG-TR
TP65H070LDG-TR
Bilderna är endast till referens
Specifikationer
- Tillverkare
- Transphorm
- kategorier
- RF JFET Transistors
- Id - Continuous Drain Current
- 25 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- PQFN-8
- Packaging
- Reel
- Pd - Power Dissipation
- 96 W
- Technology
- GaN
- Transistor Polarity
- N-Channel
- Transistor Type
- HEMT
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Breakdown Voltage
- - 20 V, + 20 V
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Senaste recensioner
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
fast delivery
Mike Ibarra
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
TP65H070LDG-TR Nyheter
03/14/2023
03/13/2023
03/09/2023
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