- Artikelnummer
- IPB65R190CFDA
- Tillverkare
- Infineon Technologies
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivning
- MOSFET N-Ch 650V 57.2A D2PAK-2
IPB65R190CFDA
Bilderna är endast till referens
Specifikationer
- Tillverkare
- Infineon Technologies
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 17.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-263-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 151 W
- Qg - Gate Charge
- 68 nC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 171 mOhms
- Technology
- SI
- Tradename
- CoolMOS
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
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Senaste recensioner
Hello! Order received, very happy. Thank you very much!
Flavia
Works. Find the price of this product is very good
Maxim Krasnov
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
The goods are OK, thank you dealers.
CHARLES SANTOS
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
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Infineon Technologies
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Infineon Technologies
Infineon Technologies
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Infineon Technologies
IPB65R190CFDA Nyheter
03/14/2023
03/13/2023
03/09/2023
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