Artikelnummer IXFX64N60P3 Tillverkare IXYS kategorier MOSFET RoHS Datablad IXFX64N60P3 Beskrivning MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
Tillverkare IXYS kategorier MOSFET Channel Mode Enhancement Id - Continuous Drain Current 64 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 1.13 kW Qg - Gate Charge 145 nC Rds On - Drain-Source Resistance 95 mOhms Technology SI Tradename HiPerFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V