Artikelnummer IXA12IF1200HB Tillverkare IXYS kategorier IGBT Transistors RoHS Datablad IXA12IF1200HB Beskrivning IGBT Transistors XPT IGBT Copack
Tillverkare IXYS kategorier IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current at 25 C 20 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 85 W Series IXA12IF1200 Technology SI