Artikelnummer FQA55N25 Tillverkare onsemi / Fairchild kategorier MOSFET RoHS Datablad FQA55N25 Beskrivning MOSFET 250V N-Channel QFET
Tillverkare onsemi / Fairchild kategorier MOSFET Channel Mode Enhancement Id - Continuous Drain Current 55 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 310 W Qg - Gate Charge 140 nC Rds On - Drain-Source Resistance 40 mOhms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 250 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V