- Artikelnummer
- SI8821EDB-T2-E1
- Tillverkare
- Vishay Semiconductors
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivning
- MOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
SI8821EDB-T2-E1
Bilderna är endast till referens
Specifikationer
- Tillverkare
- Vishay Semiconductors
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 2.3 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- MicroFoot-4
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 900 MW
- Qg - Gate Charge
- 17 nC
- Rds On - Drain-Source Resistance
- 105 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage
- 1.3 V
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Senaste recensioner
Teşekkürler
Ashir Hussain
Takes 8 days to Japan. Good!
Alex Fragkos
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Long Service and Russia!
Alex Yu
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
Khalid Ali
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Personer som tittar på SI8821EDB-T2-E1 köpte sedan
Vishay Semiconductors
Vishay / Siliconix
Vishay / Siliconix
Vishay Semiconductors
SI8821EDB-T2-E1 Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterade sökord för SI88
- SI8821EDB-T2-E1 integrerad
- SI8821EDB-T2-E1 RoHS
- SI8821EDB-T2-E1 PDF Datablad
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