- Artikelnummer
- IPB600N25N3GATMA1
- Tillverkare
- Infineon Technologies
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivning
- MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPB600N25N3GATMA1
Bilderna är endast till referens
Specifikationer
- Tillverkare
- Infineon Technologies
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 25 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-263-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 136 W
- Qg - Gate Charge
- 29 nC
- Rds On - Drain-Source Resistance
- 51 mOhms
- Technology
- SI
- Tradename
- OptiMOS
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 250 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Senaste recensioner
My package arrived wet, not know where occurs this fact, but working all right
Eddy Hustinx
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
it is safe and sound all, thank you seller!
Arturo Madril
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
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IPB600N25N3GATMA1 Nyheter
03/14/2023
03/13/2023
03/09/2023
Relaterade sökord för IPB6
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