- Artikelnummer
- IXFX120N65X2
- Tillverkare
- IXYS
- kategorier
- MOSFET
- RoHS
- Datablad
- Beskrivning
- MOSFET MOSFET 650V/120A Ultra Junction X2
IXFX120N65X2
Bilderna är endast till referens
Specifikationer
- Tillverkare
- IXYS
- kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 120 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 1.25 kW
- Qg - Gate Charge
- 225 nC
- Rds On - Drain-Source Resistance
- 24 mOhms
- Technology
- SI
- Tradename
- HiPerFET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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Senaste recensioner
Thank you very much! Very fast shipping. High quality. Very good seller.
Klimenko Yuriy Mihaylovich
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Works. Recommend
Rajiv
all is well. checked work. seller recommend.
Maurice E.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Daniel Eli
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Personer som tittar på IXFX120N65X2 köpte sedan
IXFX120N65X2 Nyheter
03/14/2023
03/13/2023
03/09/2023
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