GS66516B-TR

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Artikelnummer
GS66516B-TR
Tillverkare
GaN Systems
kategorier
MOSFET
RoHS
Datablad
Beskrivning
MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling

Specifikationer

Tillverkare
GaN Systems
kategorier
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
60 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Packaging
Reel
Qg - Gate Charge
14.2 nC
Rds On - Drain-Source Resistance
32 mOhms
Technology
GaN
Tradename
GaNPX
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
2.6 V

Senaste recensioner

goods very well received very good quality

fast delivery, item as described, thanks!!

Thank You all fine, packed very well

Everything is excellent! recommend this seller!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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